Статья: Growth of InGaAsSb/GaSb compound for infrared optoelectronic devices
In this study, we report on the synthesis of InGaAsSb epi-layer for optoelectronic devices in short infrared wavelengths (SWIR) at room temperature (RT). The InGaAsSb with lattice matched to GaSb substrate was grown by the molecular beam epitaxy (MBE) using the strain engineering. The structural and optical properties of InGaAsSb layer was investigated by high resolution X-ray diffractometer (XRD), and photoluminescence (PL). Devices with a 400×400 μm of size were fabricated using traditional photolithography and inductively coupled plasma etching. The spectral response of InGaAsSb photodetector with a 90% cutoff wavelength and electroluminescence spectra of light emitting diode (LED) obtained at 2.38 μm at an applied bias of –0.1 V and 2.25 μm with Jic = 500 mA, respectively at room temperature. Also, the spectral response of the detector indicates an increasing intensity and low noise when the temperature is high
Информация о документе
- Формат документа
- Кол-во страниц
- 6 страниц
- Загрузил(а)
- Лицензия
- CC BY
- Доступ
- Всем
Информация о статье
- ISSN
- 1606-867Х
- EISSN
- 2687-0711
- Префикс DOI
- ttps://doi.org/10.17308/kcmf.2022.24/926
- Журнал
- Condensed Matter and Interphases
- Год публикации
- 2022
- Библиографическая запись
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Nguyen T. D., Kim J. O., Lee S. J. Growth of InGaAsSb/GaSb compound for infrared optoelectronic devices.
Condensed Matter and Interphases. 2022;24(2): 250–255. https://doi.org/10.17308/kcmf.2022.24/9265
Для цитирования: Нгуен Т. Д., Ким Д. О, Ли С. Д. Выращивание соединения InGaAsSb/GaSb для инфракрасных
оптоэлектронных приборов. Конденсированные среды и межфазные границы. 2022;24(2): 250–255. https://doi.
org/10.17308/kcmf.2022.24/9265 - Каталог SCI
- Материаловедение